| PART |
Description |
Maker |
| 2N3651 2N3652 2N3650 2N3653 |
35A silicon controlled rectifier. Vrsom 300V.
35A silicon controlled rectifier. Vrsom 400V.
35A silicon controlled rectifier. Vrsom 150V.
35A silicon controlled rectifier. Vrsom 500V.
|
General Electric Solid State
|
| SBT350-06L |
Schottky Barrier Diode (Twin Type 隆陇 Cathode Common) 60V, 35A Rectifier
Schottky Barrier Diode (Twin Type ・ Cathode Common) 60V, 35A Rectifier
|
Sanyo Semicon Device
|
| GBPC3501W GBPC3510W GBPC35005 GBPC35005W GBPC3501 |
600V; 35A glass passivated bridge rectifier
HIGH CURRENT SILICON BRIDGE RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 35 Amperes)
Dual Audio Operational Amplifier 8-TSSOP -40 to 85 35 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
35A GLASS PASSIVATED BRIDGE RECTIFIER 35 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
|
Pan Jit International Inc.
DIODES[Diodes Incorporated]
Diodes, Inc.
|
| STB3NA80 4229 STB3NA80T4 |
Resettable Fuse; Series:1210L; Thermistor Type:PTC; Operating Voltage Max:6VDC; Holding Current:0.35A; Tripping Current:0.7A; External Depth:0.85mm; Length:3.43mm; Initial Resistance Min:0.32ohm; Initial Resistance Max:1.3ohm RoHS Compliant: Yes
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
From old datasheet system
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| BD16922EFV-M |
Automotive 2ch 60V Max, H-bridge Drivers
|
ROHM
|
| 1N659 1N660 FDLL659 1N661 1N746 1N963 1N3600 FDLL6 |
Ultra fast low capacitance diode. Working inverse voltage 50 V.
High speed high conductance diode. Working inverse voltage 175 V.
General purpose low diode. Working inverse voltage 100V.
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA).
General purpose low diode. Working inverse voltage 200V.
General Purpose Diodes
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
| BP35-06G BP35-08G BP35-005G BP35-01G BP35-02G BP35 |
35A HIGH CURRENT SILICON BRIDGE RECTIFIERS
|
Frontier Electronics.
|
| 2SJ598 2SJ598-Z |
P-ch power MOSFET 60V RDS(on)MAX.=130m ohm TO-251 TO-252
|
NEC
|
| KBPC3500P KBPC3500PW KBPC3501P KBPC3501PW KBPC3502 |
15, 25, 35A HIGH CURRENT BRIDGE RECTIFIER 1555A条，大电流整流桥
5V High-Speed RS-232 Transceivers with 0.1uF Capacitors 5V的高RS - 232收发器与0.1uF电容
15, 25, 35A HIGH CURRENT BRIDGE RECTIFIER 15255A条，大电流整流桥
15/ 25/ 35A HIGH CURRENT BRIDGE RECTIFIER
|
Won-Top Electronics Co., Ltd.
|
| RJK0629DPK RJK0629DPK13 RJK0629DPK-15 |
60V, 85A, 4.5m max.N Channel Power MOS FET High-Speed Switching Use
60V, 85A, 4.5m?max. N Channel Power MOS FET High-Speed Switching Use
|
Renesas Electronics Corporation
|
| SR-5-1.25A-BK COOPERINDUSTRIES-SR-5-1.25A-AP SR-5- |
FUSE 1.25A 250V T-LAG IEC SHORT TIME DELAY BLOW ELECTRIC FUSE, 1.25A, 250VAC, 35A (IR), THROUGH HOLE
FUSE 1.6A 250V T-LAG IEC SHORT
PC Board Fuse; Current Rating:1A; Voltage Rating:250V; Fuse Terminals:Radial Lead; Fuse Size/Group:Subminiature; Fuse Type:Time Delay; Interrupting Current Max:35A; Leaded Process Compatible:Yes; Packaging:Ammo Pack
FUSE 1A 250V T-LAG IEC SHORT
Subminiature Fuses
|
Cooper Bussmann, Inc.
COOPER INDUSTRIES
List of Unclassifed Man...
|
